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SUD35N05-26L
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ a
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current b
Drain-Source On-State Resistance b
Forward Transconductance b
V BR
V GS(th)
I GSS
I DSS
I D(on)
R DS(on)
g fs
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
V DS = 44 V, V GS = 0 V
V DS = 44 V, V GS = 0 V, T J = 125 °C
V DS = ? 5 V, V GS = 5 V
V GS = 10 V, I D = 20 A
V GS = 10 V, I D = 10 A, T J = 125 °C
V GS = 4.5 V, I D = 15 A
V DS = 15 V, I D = 20 A
55
1
35
0.0165
0.0215
25
± 100
1
50
0.0200
0.0350
0.0260
V
nA
μA
A
?
S
Dynamic a
Input Capacitance
C iss
885
Gate-Source Charge
Gate-Drain Charge
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
c
c
Turn-On Delay Time c
C oss
C rss
Q g
Q gs
Q gd
t d(on)
V GS = 0 V, V DS = 25 V, f = 1 MHz
V DS = 25 V, V GS = 5 V, I D = 35 A
185
80
10.5
4
4.8
5
13
8
pF
nC
Rise Time
c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = 25 V, R L = 0.3 ?
I D ? 35 A, V GEN = 10 V, R G = 2.5 ?
18
20
100
30
30
150
ns
Source-Drain Diode Ratings and Characteristic (T C = 25 °C)
Continuous Current
Pulsed Current
I S
I SM
35
80
A
Diode Forward Voltage b
V SD
I F = 80 A, V GS = 0 V
1.5
V
Source-Drain Reverse Recovery Time
t rr
I F = 35 A, di/dt = 100 A/μs
25
40
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 71443
S12-1360-Rev. C, 11-Jun-12
For more information please contact: pmostechsupport@vishay.com
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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